Invention Grant
- Patent Title: Resistive memory array
- Patent Title (中): 电阻式存储器阵列
-
Application No.: US14219350Application Date: 2014-03-19
-
Publication No.: US09330746B2Publication Date: 2016-05-03
- Inventor: Kai-Chun Lin , Hung-Chang Yu , Ku-Feng Lin , Yue-Der Chih
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/16

Abstract:
A circuit that includes a current source module, a current sink module and a memory bank is disclosed. Each of the current source module, the current sink module and the memory bank is connected to the first bit/source line and the second bit/source line. The memory bank is bounded by the current source module and the current sink module. When the current source module and the current sink module receive a triggering pulse from the first bit/source line and a select signal with a first state, the current source module is activated to generate an operating current to the first bit/source line that transmits through a conducted memory cell of the memory bank and the current sink module is activated to drain the operating current from the second bit/source line.
Public/Granted literature
- US20150269997A1 Resistive Memory Array Public/Granted day:2015-09-24
Information query