Invention Grant
- Patent Title: Non-volatile latch using spin-transfer torque memory device
- Patent Title (中): 使用自旋转移转矩存储器件的非易失性锁存器
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Application No.: US13894266Application Date: 2013-05-14
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Publication No.: US09330747B2Publication Date: 2016-05-03
- Inventor: Yih Wang , Fatih Hamzaoglu
- Applicant: Yih Wang , Fatih Hamzaoglu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C11/16
- IPC: G11C11/16
Abstract:
Described is an apparatus of a non-volatile logic (NVL), the apparatus comprises: a sensing circuit to sense differential resistance; a first magnetic-tunneling-junction (MTJ) device coupled to the sensing circuit; a second MTJ device coupled to the sensing circuit, the first and second MTJ devices operable to provide differential resistance; and a buffer to drive complementary signals to the first and second MTJ devices respectively.
Public/Granted literature
- US20140340957A1 NON-VOLATILE LATCH USING SPIN-TRANSFER TORQUE MEMORY DEVICE Public/Granted day:2014-11-20
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