Invention Grant
- Patent Title: SRAM wordline driver supply block with multiple modes
- Patent Title (中): SRAM字线驱动器供电块具有多种模式
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Application No.: US14579840Application Date: 2014-12-22
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Publication No.: US09330751B2Publication Date: 2016-05-03
- Inventor: Shahnaz Nagle , Prashant Kenkare
- Applicant: Shahnaz Nagle , Prashant Kenkare
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/419 ; G11C8/08
Abstract:
A wordline driver supply block supporting multiple operation modes of a memory of a microprocessor in a device for reducing power consumption thereof.
Public/Granted literature
- US20150194208A1 SRAM WORDLINE DRIVER SUPPLY BLOCK WITH MULTIPLE MODES Public/Granted day:2015-07-09
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