Invention Grant
- Patent Title: High voltage step down regulator with breakdown protection
- Patent Title (中): 高压降压稳压器具有故障保护
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Application No.: US14459795Application Date: 2014-08-14
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Publication No.: US09330776B2Publication Date: 2016-05-03
- Inventor: Jonathan Huynh , Jongmin Park , Trung Pham
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Pano
- Assignee: SanDISK Technologies Inc.
- Current Assignee: SanDISK Technologies Inc.
- Current Assignee Address: US TX Pano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/30 ; G11C16/10 ; G11C16/26 ; H02M3/158

Abstract:
A high voltage step regulator, such as would be used to provide a regulated low voltage (on the order of a few volts) from a high voltage external supply (e.g. 12V), is presented. To protect the output transistor, through which the output is provided from the input, from breakdown, a depletion type device is connected between the supply and the output transistor. The control gate of the depletion device is then connected to the output level of the regulator. This reduces the voltage drop across the output transistor, helping to avoid violating design rules (EDR) on how great a voltage differential can be placed across the output transistor. Examples of applications for such a circuit are for various operating voltages on a non-volatile memory chip operating with a high voltage power supply.
Public/Granted literature
- US20160049206A1 High Voltage Step Down Regulator with Breakdown Protection Public/Granted day:2016-02-18
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