Invention Grant
US09330791B2 Memory systems and methods of managing failed memory cells of semiconductor memories
有权
管理半导体存储器的故障存储单元的存储器系统和方法
- Patent Title: Memory systems and methods of managing failed memory cells of semiconductor memories
- Patent Title (中): 管理半导体存储器的故障存储单元的存储器系统和方法
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Application No.: US14326966Application Date: 2014-07-09
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Publication No.: US09330791B2Publication Date: 2016-05-03
- Inventor: Sangyeun Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0140131 20131118
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/50 ; G11C11/40

Abstract:
A memory system includes a memory controller configured to replace a memory block including a failed memory cell with a unit cache block of a cache memory in response to detection of the failed memory cell in the memory block. The unit cache block is smaller than a minimum size of a memory cell array capable of being blocked by an operating system, and the unit cache block has substantially the same storage capacity as the memory block.
Public/Granted literature
- US20150143165A1 MEMORY SYSTEMS AND METHODS OF MANAGING FAILED MEMORY CELLS OF SEMICONDUCTOR MEMORIES Public/Granted day:2015-05-21
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