Invention Grant
- Patent Title: Semiconductive ceramic sintered compact
- Patent Title (中): 半导体陶瓷烧结体
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Application No.: US13690125Application Date: 2012-11-30
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Publication No.: US09330806B2Publication Date: 2016-05-03
- Inventor: Shogo Shimada , Yasutaka Ushijima , Atsushi Teramoto
- Applicant: TOTO LTD.
- Applicant Address: JP Fukuoka
- Assignee: Toto Ltd.
- Current Assignee: Toto Ltd.
- Current Assignee Address: JP Fukuoka
- Agency: Carrier Blackman & Associates, P.C.
- Agent Joseph P. Carrier; Anne G. Sabourin
- Priority: JP2011-264389 20111202; JP2012-206881 20120920
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H01B1/04 ; H01B1/08 ; H01B1/16 ; C04B35/117

Abstract:
There is provided a semiconductive ceramic sintered compact that has a conductivity high enough to attain static electricity removal and antistatic purposes and, at the same time, has excellent mechanical properties or stability over time. The semiconductive ceramic sintered compact includes at least a main phase and first and second phases contained in the main phase observed as a result of observation of any face of the sintered compact, the main phase being a ceramic sintered phase containing Al2O3 particles, the first phase being a grain boundary phase including a conductive substance-containing conductive phase and Al2O3 particles, the Al2O3 particles being present in an island-sea form in the conductive phase, the second phase being a grain boundary phase containing a conductive phase having the same composition as the conductive phase in the first phase and having a structure that electrically connects the first phases three-dimensionally to each other.
Public/Granted literature
- US20130140508A1 SEMICONDUCTIVE CERAMIC SINTERED COMPACT Public/Granted day:2013-06-06
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