Invention Grant
- Patent Title: Structure and method for a transformer with magnetic features
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Application No.: US14659821Application Date: 2015-03-17
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Publication No.: US09330830B2Publication Date: 2016-05-03
- Inventor: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Huan-Neng Chen , Ho-Hsiang Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01F27/28 ; H01L23/522 ; H01F5/00 ; H01L23/528 ; H01L49/02

Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.
Public/Granted literature
- US20150255207A1 STRUCTURE AND METHOD FOR A TRANSFORMER WITH MAGNETIC FEATURES Public/Granted day:2015-09-10
Information query
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