Invention Grant
US09330853B2 Photoelectric conversion element 有权
光电转换元件

Photoelectric conversion element
Abstract:
A photoelectric conversion element includes an optically transparent support, a porous semiconductor layer containing fine semiconductor particles and a photosensitizer, a conductive layer, and a counter electrode provided in that order, each of the porous semiconductor layer and the conductive layer contains a carrier-transport material. The porous semiconductor layer includes at least two layers each containing fine semiconductor particles having different particle sizes. The fine semiconductor particles contained in a layer of the layers located closest to the counter electrode, the layers constituting the porous semiconductor layer, have an average particle size of 380 nm or less.
Public/Granted literature
Information query
Patent Agency Ranking
0/0