Invention Grant
- Patent Title: Photoelectric conversion element
- Patent Title (中): 光电转换元件
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Application No.: US14366798Application Date: 2012-12-10
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Publication No.: US09330853B2Publication Date: 2016-05-03
- Inventor: Atsushi Fukui , Ryoichi Komiya , Ryohsuke Yamanaka
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2011-281701 20111222
- International Application: PCT/JP2012/081896 WO 20121210
- International Announcement: WO2013/094446 WO 20130627
- Main IPC: H01G9/20
- IPC: H01G9/20

Abstract:
A photoelectric conversion element includes an optically transparent support, a porous semiconductor layer containing fine semiconductor particles and a photosensitizer, a conductive layer, and a counter electrode provided in that order, each of the porous semiconductor layer and the conductive layer contains a carrier-transport material. The porous semiconductor layer includes at least two layers each containing fine semiconductor particles having different particle sizes. The fine semiconductor particles contained in a layer of the layers located closest to the counter electrode, the layers constituting the porous semiconductor layer, have an average particle size of 380 nm or less.
Public/Granted literature
- US20140345678A1 PHOTOELECTRIC CONVERSION ELEMENT Public/Granted day:2014-11-27
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