Invention Grant
- Patent Title: Ion implantation device
- Patent Title (中): 离子注入装置
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Application No.: US14420777Application Date: 2013-09-12
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Publication No.: US09330880B2Publication Date: 2016-05-03
- Inventor: Satoshi Naganawa , Daisuke Goto , Suguru Kenmochi
- Applicant: LINTEC Corporation
- Applicant Address: JP Tokyo
- Assignee: LINTEC CORPORATION
- Current Assignee: LINTEC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2012-204941 20120918
- International Application: PCT/JP2013/074674 WO 20130912
- International Announcement: WO2014/046002 WO 20140327
- Main IPC: G21K5/04
- IPC: G21K5/04 ; H01J37/04 ; C23C14/48 ; H05H1/46 ; H01J37/32 ; C23C14/56 ; H01J37/317 ; H05H1/48

Abstract:
An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound.
Public/Granted literature
- US20150206700A1 ION IMPLANTATION DEVICE Public/Granted day:2015-07-23
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