Invention Grant
- Patent Title: Plasma reactor with tiltable overhead RF inductive source
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Application No.: US13783776Application Date: 2013-03-04
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Publication No.: US09330887B2Publication Date: 2016-05-03
- Inventor: Kenneth S. Collins , Andrew Nguyen , Martin Jeffrey Salinas , Imad Yousif , Ming Xu
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J7/24 ; H05B31/26 ; H01J37/32
Abstract:
Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
Public/Granted literature
- US20130206594A1 PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE Public/Granted day:2013-08-15
Information query
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