Invention Grant
- Patent Title: Dry etching method
- Patent Title (中): 干蚀刻法
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Application No.: US14447915Application Date: 2014-07-31
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Publication No.: US09330888B2Publication Date: 2016-05-03
- Inventor: Xiangqian Ding , Yao Liu , Xi Chen , Liangliang Li , Jinchao Bai , Xiaowei Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Christopher Thomas
- Priority: CN201410171759 20140425
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
The present invention discloses a dry etching method. The dry etching method comprises: etching a first medium layer; introducing a second reaction gas in a reaction chamber, and exciting the second reaction gas into plasmas with a second radiofrequency power, so that the plasmas formed from the second reaction gas are combined with particulate pollutants in the reaction chamber, and in this case the reaction chamber is vacuumized to perform conversion processing; and etching a second medium layer. The technical solution of the present invention is capable of effectively preventing particulate pollutants from falling onto the glass substrate in the procedure of executing conversion processing, meanwhile, the effect of chamber purifying through vacuumizing is improved, and the amount of the particulate pollutants in the reaction chamber is effectively reduced.
Public/Granted literature
- US20150311039A1 Dry Etching Method Public/Granted day:2015-10-29
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