Invention Grant
US09330900B2 Layer-by-layer deposition of carbon-doped oxide films through cyclical silylation
有权
通过循环甲硅烷化逐层沉积碳掺杂的氧化物膜
- Patent Title: Layer-by-layer deposition of carbon-doped oxide films through cyclical silylation
- Patent Title (中): 通过循环甲硅烷化逐层沉积碳掺杂的氧化物膜
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Application No.: US14653119Application Date: 2014-02-18
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Publication No.: US09330900B2Publication Date: 2016-05-03
- Inventor: Kelvin Chan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- International Application: PCT/US2014/016944 WO 20140218
- International Announcement: WO2014/158462 WO 20141002
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/02 ; H01L21/768 ; H01L21/285 ; H01L23/532 ; H01L21/3105
Abstract:
Embodiments of the present invention generally relate to methods of forming carbon-doped oxide films. The methods generally include generating hydroxyl groups on a surface of the substrate using a plasma, and then performing silylation on the surface of the substrate. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma in order to perform an additional silylation. Multiple plasma treatments and silylations may be performed to deposit a layer having a desired thickness.
Public/Granted literature
- US20150371846A1 LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS THROUGH CYCLICAL SILYLATION Public/Granted day:2015-12-24
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