Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US13845666Application Date: 2013-03-18
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Publication No.: US09330905B2Publication Date: 2016-05-03
- Inventor: Takashi Onizawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-085459 20120404
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L29/40 ; H01L29/51 ; H01L29/66 ; H01L29/778 ; H01L21/28 ; H01L29/20 ; H01L29/417

Abstract:
A semiconductor device, in which the generation of interface states in the interface region between a nitride semiconductor layer and an aluminum oxide layer is suppressed, includes a first nitride semiconductor layer and an aluminum oxide layer. The first nitride semiconductor layer includes Ga. The aluminum oxide layer directly contacts the upper surface of the first nitride semiconductor layer, and includes H (hydrogen) atoms at least within a defined region from the interface with the first nitride semiconductor layer. In addition, the peak value of an H atom concentration in the above region is in a range of 1×1020 cm−3 to 5×1021 cm−3.
Public/Granted literature
- US20130264576A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2013-10-10
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