Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12912744Application Date: 2010-10-27
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Publication No.: US09330913B2Publication Date: 2016-05-03
- Inventor: Jang-Hyun You , Jong-Min Lee , Dong-Hwa Kwak , Tae-Yong Kim , Jong-Hoon Na , Young-Woo Park , Dong-Sik Lee , Jee-Hoon Han
- Applicant: Jang-Hyun You , Jong-Min Lee , Dong-Hwa Kwak , Tae-Yong Kim , Jong-Hoon Na , Young-Woo Park , Dong-Sik Lee , Jee-Hoon Han
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agent Monica H. Choi
- Priority: KR10-2010-0061267 20100628
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/033 ; H01L21/28 ; H01L21/308 ; H01L21/3213 ; H01L21/762 ; H01L27/115 ; H01L29/66
Abstract:
A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The branch portion of a middle conductive line is disposed between and shorter than the respective branch portions of the outer conductive lines such that contact pads may be formed integral with such branch portions of the conductive lines.
Public/Granted literature
- US20110316165A1 Semiconductor Device and Method of Fabricating the Same Public/Granted day:2011-12-29
Information query
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