Invention Grant
- Patent Title: Fabrication of a silicon structure and deep silicon etch with profile control
- Patent Title (中): 通过轮廓控制制造硅结构和深度硅蚀刻
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Application No.: US12338950Application Date: 2008-12-18
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Publication No.: US09330926B2Publication Date: 2016-05-03
- Inventor: Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
- Applicant: Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/3065 ; H01J37/32 ; H01L21/02 ; H01L21/311 ; H01L21/3213
Abstract:
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
Public/Granted literature
- US20090184089A1 FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL Public/Granted day:2009-07-23
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