Invention Grant
- Patent Title: Methods for selective etching of a multi-layer substrate
- Patent Title (中): 选择性蚀刻多层基板的方法
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Application No.: US14084843Application Date: 2013-11-20
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Publication No.: US09330928B2Publication Date: 2016-05-03
- Inventor: Jinhong Tong , Frederick Carlos Fulgenico , ShouQian Shao
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C23F3/00 ; H01L21/3065 ; H01L21/3213 ; H01L45/00 ; H01L21/311 ; H01L27/24
Abstract:
A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.
Public/Granted literature
- US20140077147A1 Methods For Selective Etching Of A Multi-Layer Substrate Public/Granted day:2014-03-20
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