Invention Grant
- Patent Title: Method and apparatus for planarizing a polymer layer
- Patent Title (中): 聚合物层平坦化的方法和装置
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Application No.: US12137259Application Date: 2008-06-11
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Publication No.: US09330933B2Publication Date: 2016-05-03
- Inventor: Burn Jeng Lin
- Applicant: Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B29C59/02
- IPC: B29C59/02 ; H01L21/3105 ; H01L21/67
Abstract:
A method for planarizing a polymer layer is provided which includes providing a substrate having the polymer layer formed thereon, providing a structure having a substantially flat surface, pressing the flat surface of the structure to a top surface of the polymer layer such that the top surface of the polymer layer substantially conforms to the flat surface of the structure, and separating the flat surface of the structure from the top surface of the polymer material layer.
Public/Granted literature
- US20090309253A1 METHOD AND APPARATUS FOR PLANARIZING A POLYMER LAYER Public/Granted day:2009-12-17
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