A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate than the Ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the Ge-containing film at a higher rate than a second metal layer is deposited on the Ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the Ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer.