Invention Grant
- Patent Title: Stacked protection devices and related fabrication methods
- Patent Title (中): 堆叠式保护装置及相关制造方法
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Application No.: US14034213Application Date: 2013-09-23
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Publication No.: US09330961B2Publication Date: 2016-05-03
- Inventor: Weize Chen , Patrice M. Parris
- Applicant: Weize Chen , Patrice M. Parris
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/02
Abstract:
Protection device structures and related fabrication methods and devices are provided. An exemplary device includes a first interface, a second interface, a first protection circuitry arrangement coupled to the first interface, and a second protection circuitry arrangement coupled between the first protection circuitry arrangement and the second interface. The second protection circuitry arrangement includes a first transistor and a diode coupled to the first transistor, wherein the first transistor and the diode are configured electrically in series between the first protection circuitry arrangement and the second interface.
Public/Granted literature
- US20150085407A1 STACKED PROTECTION DEVICES AND RELATED FABRICATION METHODS Public/Granted day:2015-03-26
Information query
IPC分类:
