Methods of forming semiconductor devices

Invention Grant

US09330966B2 Methods of forming semiconductor devices 有权

Title translation: 形成半导体器件的方法

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Patent Title: Methods of forming semiconductor devices
Patent Title (中): 形成半导体器件的方法
Application No.: US13313172

Application Date: 2011-12-07
Publication No.: US09330966B2

Publication Date: 2016-05-03
Inventor: Sun-Young Kim , Jun-Eui Song , Tae-Wan Lim
Applicant: Sun-Young Kim , Jun-Eui Song , Tae-Wan Lim
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel & Sibley, P.A.
Priority: KR10-2010-0135146 20101227
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; H01L27/115

Methods of forming semiconductor devices

Abstract:

Methods of forming a semiconductor device are provided. The methods may include forming a second insulation pattern on a first insulation pattern. The first insulation pattern may cover a plurality of conductive structures, and may include a hole therein. The second insulation pattern may include a trench therein that is connected with the hole. The methods may also include forming a spacer on sidewalls of the hole and the trench. The methods may further include forming a wiring structure in the hole and the trench.

Abstract(Chinese):

提供了形成半导体器件的方法。所述方法可以包括在第一绝缘图案上形成第二绝缘图案。第一绝缘图案可以覆盖多个导电结构，并且其中可以包括孔。第二绝缘图案可以包括与孔连接的沟槽。所述方法还可以包括在孔和沟槽的侧壁上形成间隔物。该方法还可以包括在孔和沟槽中形成布线结构。

Public/Granted literature

US20120164831A1 Methods Of Forming Semiconductor Devices Public/Granted day:2012-06-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）