A method of fabricating a semiconductor device with reduced leak paths is disclosed. The method comprises etching a void in non-conductive material in the semiconductor device to provide a conduction path between isolated material, forming a non-conductive surface layer on an unintended conductive item adjacent to the void, and filling the void with a conductive material. Forming a non-conductive surface layer may comprise oxidizing a surface surrounding the void. Forming a non-conductive surface layer may comprise oxidizing a side wall of the void. Forming a non-conductive surface layer may comprise oxidizing a surface surrounding the void using plasma oxidation operations. Forming a non-conductive surface layer may comprise oxidizing a side wall of the void using plasma oxidation operations. The unintended conductive item may comprise a conductive impurity or conductive residue. The void may comprise a trench or a hole for a via.