Invention Grant
- Patent Title: Method of fabricating integrated circuit
- Patent Title (中): 集成电路制作方法
-
Application No.: US14534180Application Date: 2014-11-06
-
Publication No.: US09330968B1Publication Date: 2016-05-03
- Inventor: Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A method of fabricating an integrated circuit includes the following steps. A first reticle is used to form a first pattern and a first alignment mark and a second reticle is used to form a second pattern and a second alignment mark in a same layer. A third reticle is aligned to the first alignment mark and the second alignment mark, to obtain an overlay correction value; additionally, a third reticle is aligned to the first alignment mark to obtain a first overlay correction value, a third reticle is aligned to the second alignment mark to obtain a second overlay correction value, and a total overlay correction value is obtained by trading off the first overlay correction value and the second overlay correction value. The third reticle is used to form a third pattern by aligning the third reticle with the total overlay correction value.
Public/Granted literature
- US20160133510A1 METHOD OF FABRICATING INTEGRATED CIRCUIT Public/Granted day:2016-05-12
Information query
IPC分类: