Invention Grant
US09330968B1 Method of fabricating integrated circuit 有权
集成电路制作方法

Method of fabricating integrated circuit
Abstract:
A method of fabricating an integrated circuit includes the following steps. A first reticle is used to form a first pattern and a first alignment mark and a second reticle is used to form a second pattern and a second alignment mark in a same layer. A third reticle is aligned to the first alignment mark and the second alignment mark, to obtain an overlay correction value; additionally, a third reticle is aligned to the first alignment mark to obtain a first overlay correction value, a third reticle is aligned to the second alignment mark to obtain a second overlay correction value, and a total overlay correction value is obtained by trading off the first overlay correction value and the second overlay correction value. The third reticle is used to form a third pattern by aligning the third reticle with the total overlay correction value.
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