Invention Grant
- Patent Title: Workpiece processing method
- Patent Title (中): 工件加工方法
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Application No.: US14754424Application Date: 2015-06-29
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Publication No.: US09330973B2Publication Date: 2016-05-03
- Inventor: Hikaru Watanabe , Masanobu Honda , Akihiro Tsuji
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-135629 20140701; JP2014-219285 20141028
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01B13/00 ; C23F1/00 ; H01L21/768
Abstract:
Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NF3 gas to denature the residue and the second section, and the denatured region is removed.
Public/Granted literature
- US20160005651A1 WORKPIECE PROCESSING METHOD Public/Granted day:2016-01-07
Information query
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