Invention Grant
- Patent Title: Through level vias and methods of formation thereof
- Patent Title (中): 通过通孔及其形成方法
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Application No.: US12913497Application Date: 2010-10-27
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Publication No.: US09330974B2Publication Date: 2016-05-03
- Inventor: Sunoo Kim , Muhammed Shafi Pallachalil , Moosung Chae , Erdem Kaltalioglu
- Applicant: Sunoo Kim , Muhammed Shafi Pallachalil , Moosung Chae , Erdem Kaltalioglu
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532
Abstract:
In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.
Public/Granted literature
- US20120104622A1 Through Level Vias and Methods of Formation Thereof Public/Granted day:2012-05-03
Information query
IPC分类:
