Invention Grant
- Patent Title: Integrated circuit substrates comprising through-substrate vias and methods of forming through-substrate vias
- Patent Title (中): 集成电路衬底包括贯穿衬底通孔和形成贯通衬底通孔的方法
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Application No.: US13485539Application Date: 2012-05-31
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Publication No.: US09330975B2Publication Date: 2016-05-03
- Inventor: Anurag Jindal , Hongqi Li
- Applicant: Anurag Jindal , Hongqi Li
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48
Abstract:
A method of forming a through-substrate via includes forming a through-substrate via opening at least partially through a substrate from one of opposing sides of the substrate. A first material is deposited to line and narrow the through-substrate via opening. The first material is etched to widen at least an elevationally outermost portion of the narrowed through-substrate via opening on the one side. After the etching, a conductive second material is deposited to fill the widened through-substrate via opening. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.
Public/Granted literature
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