Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13253390Application Date: 2011-10-05
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Publication No.: US09330978B2Publication Date: 2016-05-03
- Inventor: Koji Taniguchi
- Applicant: Koji Taniguchi
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2010-227908 20101007
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L21/8234 ; H01L21/762 ; H01L27/108 ; H01L29/10
Abstract:
A semiconductor device includes a semiconductor substrate, a gate electrode, a dummy gate electrode, and a first impurity diffusion region. The semiconductor substrate has first and second grooves. The gate electrode is in the first groove. The dummy gate electrode is in the second groove. The dummy gate electrode has a first top surface. The first impurity diffusion region in the semiconductor substrate is positioned between the first and second grooves. The first top surface is positioned at a lower level than a bottom of the first impurity diffusion region.
Public/Granted literature
- US20120086060A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2012-04-12
Information query
IPC分类:
