Invention Grant
US09330988B1 Method of fine-tuning process controls during integrated circuit chip manufacturing based on substrate backside roughness
有权
基于衬底背面粗糙度的集成电路芯片制造过程中微调过程控制的方法
- Patent Title: Method of fine-tuning process controls during integrated circuit chip manufacturing based on substrate backside roughness
- Patent Title (中): 基于衬底背面粗糙度的集成电路芯片制造过程中微调过程控制的方法
-
Application No.: US14580283Application Date: 2014-12-23
-
Publication No.: US09330988B1Publication Date: 2016-05-03
- Inventor: Shawn A. Adderly , Kyle Babinski , Daniel A. Delibac , David A. DeMuynck , Shawn R. Goddard , Matthew D. Moon , Melissa J. Roma , Craig E. Schneider
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Steven J. Meyers, Esq.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/3213

Abstract:
Disclosed is a method of manufacturing integrated circuit (IC) chips. In the method, wafers are received and the backside roughness levels of these wafers are determined. Based on the backside roughness levels, the wafers are sorted into different groups. Chips having the same design are manufactured on wafers from all of the different groups. However, during manufacturing, process(es) is/are performed differently on wafers from one or more of the different groups to minimize systematic variations in a specific parameter (e.g., wire width) in the resulting chips. Specifically, because systematic variations may occur when the exact same processes are used to form IC chips on wafers with different backside roughness levels, the method disclosed herein selectively adjusts one or more of those processes when performed on wafers from one or more of the different groups to ensure that the specific parameter is approximately equal in the resulting integrated IC chips.
Information query
IPC分类: