Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14224489Application Date: 2014-03-25
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Publication No.: US09331006B2Publication Date: 2016-05-03
- Inventor: Yuichi Nakao , Yasuhiro Fuwa
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-062518 20130325; JP2013-062519 20130325; JP2013-062520 20130325; JP2013-062521 20130325; JP2013-062522 20130325; JP2013-062523 20130325; JP2014-011044 20140124
- Main IPC: H01L23/13
- IPC: H01L23/13 ; H01L25/16 ; H01L23/495 ; H01L23/14 ; H01L23/24 ; H01L23/31 ; H01L23/498
Abstract:
A semiconductor device includes a substrate that is made of a semiconductor material and has a main surface formed with a recess. The semiconductor device also includes a wiring layer formed on the substrate, an electronic element housed in the recess, and a sealing resin covering at least a part of the electronic element.
Public/Granted literature
- US20140284731A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-09-25
Information query
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