Invention Grant
- Patent Title: Integrated capacitor
- Patent Title (中): 集成电容
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Application No.: US13902575Application Date: 2013-05-24
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Publication No.: US09331013B2Publication Date: 2016-05-03
- Inventor: Hsiao-Tsung Yen , Cheng-Wei Luo , Jun-Cheng Huang , Chin-Wei Kuo , Min-Chie Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522

Abstract:
A structure includes first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending away from the first conductive midrib. The third conductive leaf structure includes a third conductive midrib between the first conductive midrib and the second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending toward the second conductive midrib.
Public/Granted literature
- US20140264742A1 Integrated Capacitor Public/Granted day:2014-09-18
Information query
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