Invention Grant
- Patent Title: Semiconductor interconnect structure
- Patent Title (中): 半导体互连结构
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Application No.: US14013597Application Date: 2013-08-29
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Publication No.: US09331038B2Publication Date: 2016-05-03
- Inventor: Meng-Tse Chen , Hsiu-Jen Lin , Chih-Wei Lin , Ming-Da Cheng , Chih-Hang Tung , Chung-Shi Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L25/10

Abstract:
A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).
Public/Granted literature
- US20150061115A1 INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-03-05
Information query
IPC分类: