Invention Grant
- Patent Title: Semiconductor device and semiconductor device manufacturing method
- Patent Title (中): 半导体器件和半导体器件制造方法
-
Application No.: US13961323Application Date: 2013-08-07
-
Publication No.: US09331041B2Publication Date: 2016-05-03
- Inventor: Takeshi Sunaga , Akihiro Kimura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2011-024849 20110208; JP2011-024850 20110208; JP2011-024851 20110208
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L23/495
Abstract:
A semiconductor device includes a semiconductor chip, and a terminal connected with the semiconductor chip. The terminal has a first surface and a second surface spaced from each other in a thickness direction. The semiconductor device also includes a sealing resin covering the semiconductor chip and the terminal. The sealing resin is so configured that the first surface of the terminal is exposed from the sealing resin. The terminal is formed with an opening to be filled with the sealing resin.
Public/Granted literature
- US20130320527A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2013-12-05
Information query
IPC分类:
