Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11924691Application Date: 2007-10-26
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Publication No.: US09331057B2Publication Date: 2016-05-03
- Inventor: Thorsten Meyer , Grit Sommer , Ralf Plieninger
- Applicant: Thorsten Meyer , Grit Sommer , Ralf Plieninger
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L25/16 ; H01L23/522 ; H01L23/64 ; H01L23/00 ; H01L25/00 ; H01L49/02 ; H01L21/56
Abstract:
A semiconductor device is disclosed. One embodiment provides a semiconductor chip. The semiconductor chip includes a first electrode of a capacitor. An insulating layer is arranged on top of the first electrode. A second electrode of the capacitor is applied over the insulating layer, wherein the second electrode is made of a conductive layer arranged over the semiconductor chip.
Public/Granted literature
- US20090108401A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-04-30
Information query
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