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US09331061B2 Parallel connection methods for high performance transistors 有权
高性能晶体管的并联连接方法

Parallel connection methods for high performance transistors
Abstract:
Parallel transistor circuits with reduced effects from common source induction. The parallel transistors include physical gate connections that are located electrically close to one another. The parallel circuits are arranged such that the voltage at the common gate connection resulting from transient currents across common source inductance is substantially balanced. The circuits include switching circuits, converters, and RF amplifiers.
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