Invention Grant
- Patent Title: Parallel connection methods for high performance transistors
- Patent Title (中): 高性能晶体管的并联连接方法
-
Application No.: US13596962Application Date: 2012-08-28
-
Publication No.: US09331061B2Publication Date: 2016-05-03
- Inventor: Michael A. De Rooij , Johan Strydom
- Applicant: Michael A. De Rooij , Johan Strydom
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H03K17/12
- IPC: H03K17/12 ; H01L27/02 ; H01L27/082 ; H01L27/085

Abstract:
Parallel transistor circuits with reduced effects from common source induction. The parallel transistors include physical gate connections that are located electrically close to one another. The parallel circuits are arranged such that the voltage at the common gate connection resulting from transient currents across common source inductance is substantially balanced. The circuits include switching circuits, converters, and RF amplifiers.
Public/Granted literature
- US20130049814A1 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS Public/Granted day:2013-02-28
Information query