Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14714837Application Date: 2015-05-18
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Publication No.: US09331063B2Publication Date: 2016-05-03
- Inventor: Ryo Niide , Shinichi Yamada , Yasuharu Ichinose , Toshiya Nozawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2012-134796 20120614
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/02 ; H01L27/15 ; H01L33/36 ; H01L25/16 ; H01L29/866 ; H01L23/00 ; H01L33/44 ; H01L33/48

Abstract:
A semiconductor device simplifies the manufacturing process. The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage. The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip. The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode. This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process.
Public/Granted literature
- US20150249077A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-09-03
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