Invention Grant
- Patent Title: Hybrid wide-bandgap semiconductor bipolar switches
- Patent Title (中): 混合宽带隙半导体双极开关
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Application No.: US14528140Application Date: 2014-10-30
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Publication No.: US09331068B2Publication Date: 2016-05-03
- Inventor: Leonid Fursin , Anup Bhalla
- Applicant: United Silicon Carbide, Inc.
- Applicant Address: US NY Monmouth Junction
- Assignee: United Silicon Carbide, Inc.
- Current Assignee: United Silicon Carbide, Inc.
- Current Assignee Address: US NY Monmouth Junction
- Agency: Baker & Hostetler LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/78 ; H01L29/808 ; H01L29/861 ; H01L29/739 ; H01L21/82 ; H01L23/495 ; H01L29/16 ; H01L29/20
Abstract:
A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes.
Public/Granted literature
- US20150115289A1 HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES Public/Granted day:2015-04-30
Information query
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