Invention Grant
- Patent Title: Systems and methods for fabricating semiconductor devices at different levels
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Application No.: US14926117Application Date: 2015-10-29
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Publication No.: US09331075B2Publication Date: 2016-05-03
- Inventor: Chi-Wen Liu , Chao-Hsiung Wang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L27/06 ; H01L29/06
Abstract:
Systems and methods are provided for fabricating semiconductor device structures on a substrate. For example, a substrate including a first region and a second region is provided. One or more first semiconductor device structures are formed on the first region. One or more semiconductor fins are formed on the second region. One or more second semiconductor device structures are formed on the semiconductor fins. A top surface of the semiconductor fins is higher than a top surface of the first semiconductor device structures.
Public/Granted literature
- US20160049396A1 Systems and Methods for Fabricating Semiconductor Devices at Different Levels Public/Granted day:2016-02-18
Information query
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