Method of selective filling of memory openings

Invention Grant

US09331094B2 Method of selective filling of memory openings 有权

Title translation: 选择性填充记忆孔的方法

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Patent Title: Method of selective filling of memory openings
Patent Title (中): 选择性填充记忆孔的方法
Application No.: US14265462

Application Date: 2014-04-30
Publication No.: US09331094B2

Publication Date: 2016-05-03
Inventor: Tsuyoshi Hada
Applicant: SanDisk Technologies, Inc.
Applicant Address: US TX Plano
Assignee: SANDISK TECHNOLOGIES INC.
Current Assignee: SANDISK TECHNOLOGIES INC.
Current Assignee Address: US TX Plano
Agency: The Marbury Law Group PLLC
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L27/115 ; H01L21/311 ; H01L21/02

Method of selective filling of memory openings

Abstract:

A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes providing an opening having a different sidewall material exposed on a sidewall of the opening than a bottom material exposed on a bottom of the opening, selectively forming a sacrificial material on the bottom of the opening but not on the sidewall of the opening, selectively forming a first layer on the sidewall of the opening but not on the sacrificial material located on the bottom of the opening, and selectively removing the sacrificial material to expose the bottom material on the bottom of the opening such that the first layer remains on the sidewall of the opening.

Abstract(Chinese):

一种制造诸如三维单片NAND存储器串的半导体器件的方法包括提供具有暴露在开口的侧壁上的不同侧壁材料的开口，而不是暴露在开口的底部上的底部材料，选择性地形成在开口的底部但不在开口的侧壁上的牺牲材料，选择性地在开口的侧壁上形成第一层，但不在位于开口底部的牺牲材料上，并且选择性地去除牺牲材料以暴露开口底部的底部材料使得第一层保留在开口的侧壁上。

Public/Granted literature

US20150318297A1 METHOD OF SELECTIVE FILLING OF MEMORY OPENINGS Public/Granted day:2015-11-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）