Invention Grant
- Patent Title: Display device
- Patent Title (中): 显示设备
-
Application No.: US14028744Application Date: 2013-09-17
-
Publication No.: US09331100B2Publication Date: 2016-05-03
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-210231 20120924
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786

Abstract:
A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable display device including the transistor is provided. The display device includes a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. The oxide semiconductor layer contains indium, and is in contact with the oxide layer. The oxide layer contains indium, and has a larger energy gap than the oxide semiconductor layer.
Public/Granted literature
- US20140091301A1 DISPLAY DEVICE Public/Granted day:2014-04-03
Information query
IPC分类: