Invention Grant
US09331136B2 Integrated circuit and method of fabricating the same 有权
集成电路及其制造方法

Integrated circuit and method of fabricating the same
Abstract:
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.
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