Invention Grant
- Patent Title: Integrated circuit and method of fabricating the same
- Patent Title (中): 集成电路及其制造方法
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Application No.: US14292507Application Date: 2014-05-30
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Publication No.: US09331136B2Publication Date: 2016-05-03
- Inventor: Hung-Sen Wang , Shih-Chi Yang , Kuo-Ching Chang , Wei-Sho Hung , Ho-Chun Liou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L49/02 ; H01L27/06 ; H01L29/06 ; H01L29/66

Abstract:
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.
Public/Granted literature
- US20150349045A1 INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-12-03
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