Invention Grant
- Patent Title: Ruthenium film formation method and storage medium
- Patent Title (中): 钌膜形成方法和储存介质
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Application No.: US14219141Application Date: 2014-03-19
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Publication No.: US09331139B2Publication Date: 2016-05-03
- Inventor: Hiroaki Ashizawa , Takaaki Iwai
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-059021 20130321
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L49/02 ; C23C16/18 ; C23C16/04 ; C23C16/455 ; H01L21/314 ; H01L21/768 ; H01L27/108 ; H01L21/02 ; C23C18/12
Abstract:
A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.
Public/Granted literature
- US20140287585A1 RUTHENIUM FILM FORMATION METHOD AND STORAGE MEDIUM Public/Granted day:2014-09-25
Information query
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