Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14426143Application Date: 2013-09-03
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Publication No.: US09331144B2Publication Date: 2016-05-03
- Inventor: Shingo Ujihara , Koji Taniguchi
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: Kunzler Law Group
- Priority: JP2012-194020 20120904; JP2012-280891 20121225
- International Application: PCT/JP2013/074173 WO 20130903
- International Announcement: WO2014/038683 WO 20140313
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/06 ; H01L27/108 ; H01L21/762 ; H01L21/76
Abstract:
A semiconductor device includes, on one semiconductor substrate: a first element isolation region having a first width, wherein a liner oxide film, a liner nitride film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the first element isolation region; and a second element isolation region having a second width that is larger than the first width, wherein a liner oxide film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the second element isolation region.
Public/Granted literature
- US20150270337A1 Semiconductor Device And Method for Producing the Same Public/Granted day:2015-09-24
Information query
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