A method for fabricating a semiconductor device, the method comprises forming a fin on a substrate, forming a dummy gate stack on the fin and the substrate, removing a portion of an exposed portion of the fin, forming a source/drain region on an exposed portion of the fin, forming a conductive contact on the source/drain region, removing the dummy gate stack to expose a channel region of the fin, implanting ions in the channel region of the fin, performing an annealing process, and forming a gate stack on the channel region of the fin.