Invention Grant
- Patent Title: Semiconductor device and manufacturing method
- Patent Title (中): 半导体器件及制造方法
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Application No.: US14249108Application Date: 2014-04-09
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Publication No.: US09331155B2Publication Date: 2016-05-03
- Inventor: Johannes Donkers , Hans Broekman , Stephan Heil , Mark De Keijser , Cecilia van der Schaar
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Rajeev Madnawat
- Priority: EP13163745 20130415
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L29/205 ; H01L21/285 ; H01L29/45 ; H01L29/47 ; H01L29/66 ; H01L29/778 ; H01L29/20
Abstract:
Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.
Public/Granted literature
- US20140306232A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2014-10-16
Information query
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