Invention Grant
- Patent Title: Transistor with diamond gate
- Patent Title (中): 带金刚石门的晶体管
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Application No.: US14471310Application Date: 2014-08-28
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Publication No.: US09331163B2Publication Date: 2016-05-03
- Inventor: Andrew D. Koehler , Travis J. Anderson , Marko J. Tadjer , Tatyana I. Feygelson , Karl D. Hobart
- Applicant: Andrew D. Koehler , Travis J. Anderson , Marko J. Tadjer , Tatyana I. Feygelson , Karl D. Hobart
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L29/267 ; H01L29/66 ; H01L29/778 ; H01L29/20 ; H01L29/10

Abstract:
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.
Public/Granted literature
- US20150060947A1 Transistor with Diamond Gate Public/Granted day:2015-03-05
Information query
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