Invention Grant
- Patent Title: Nonvolatile semiconductor storage device and method for manufacturing the same
- Patent Title (中): 非易失性半导体存储装置及其制造方法
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Application No.: US14313501Application Date: 2014-06-24
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Publication No.: US09331167B2Publication Date: 2016-05-03
- Inventor: Takamitsu Ishihara , Koichi Muraoka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-072107 20080319
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/51 ; H01L21/28 ; H01L29/788 ; H01L29/792 ; H01L27/115
Abstract:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
Public/Granted literature
- US20140306281A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-10-16
Information query
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