Invention Grant
- Patent Title: Semiconductor structure with deep trench thermal conduction
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Application No.: US14529506Application Date: 2014-10-31
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Publication No.: US09331177B2Publication Date: 2016-05-03
- Inventor: Kangguo Cheng , Balasubramanian Pranatharthi Haran , Junjun Li , Shom Ponoth , Theodorus Eduardus Standaert , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Steven J. Meyers; Matthew C. Zehrer; Howard M. Cohn
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L29/861 ; H01L29/40 ; H01L29/423 ; H01L27/02 ; H01L23/367 ; H01L23/373 ; H01L29/06
Abstract:
Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.
Public/Granted literature
- US20150054082A1 SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION Public/Granted day:2015-02-26
Information query
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