Invention Grant
- Patent Title: Semiconductor device and method for fabricating thereof
-
Application No.: US13786252Application Date: 2013-03-05
-
Publication No.: US09331180B2Publication Date: 2016-05-03
- Inventor: Yukihiro Utsuno
- Applicant: Spansion LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Priority: JPJP2004-016119 20041029
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/66 ; H01L29/423 ; H01L29/788

Abstract:
A silicon nitride film, which is a second hard mask, is dry etched to be removed completely. The silicon nitride film, which is formed on a sidewall of a silicon nitride film used as a first hard mask, has a relatively low etching rate. Therefore, if the silicon nitride film is continued etching until the corresponding portion thereof is removed, polysilicon is etched in a direction of depth in trench shape. Then, floating gates in adjacent cells are separated and a step portion of the polysilicon is formed. Consequently, a remaining portion of the silicon nitride film used as the first hard mask is removed, an ONO film is laminated on a whole surface of the poly silicon having the step portion on an edge that has been etched, and then, a polysilicon for a control gate is laminated on the ONO film.
Public/Granted literature
- US20130183819A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF Public/Granted day:2013-07-18
Information query
IPC分类: