Invention Grant
- Patent Title: Semiconductor device with multilayer contact and method of manufacturing the same
- Patent Title (中): 具有多层接触的半导体器件及其制造方法
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Application No.: US13512366Application Date: 2009-12-21
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Publication No.: US09331186B2Publication Date: 2016-05-03
- Inventor: Soenke Habenicht , Detief Oelgeschlaeger , Olrik Schumacher , Stefan Bengt Berglund
- Applicant: Soenke Habenicht , Detief Oelgeschlaeger , Olrik Schumacher , Stefan Bengt Berglund
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2009/055864 WO 20091221
- International Announcement: WO2011/077181 WO 20110630
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L29/732 ; H01L29/06 ; H01L29/417 ; H01L29/66
Abstract:
The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
Public/Granted literature
- US20120248575A1 SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-10-04
Information query
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