Systems, circuits, and methods for protecting an Insulated-Gate Bipolar Transistor (IGBT) from short-circuit events are provided. A short-circuit protection circuit is described that includes a switch, a resistor, a capacitor, and an optional current buffer that provide a strong pull-down to the IGBT in response to detecting a short-circuit event and then controls a rate at which turn-off current is decreased, thereby minimizing a peak voltage for the IGBT.