Invention Grant
- Patent Title: Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
- Patent Title (中): 碳化硅衬底上的低位错密度III族氮化物层及其制造方法
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Application No.: US11169471Application Date: 2005-06-29
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Publication No.: US09331192B2Publication Date: 2016-05-03
- Inventor: Adam William Saxler
- Applicant: Adam William Saxler
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agent Anthony J. Josephson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/16 ; H01L29/20
Abstract:
Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4×108 cm−2 and/or an isolation voltage of at least about 50V.
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